램(메모리) 정보 보여주는 프로그램

빨간 원안 녹색 메뉴 클릭하면 다운로드 된다.
개인은 공짜인데 업체는 돈줘야 된다.

https://www.passmark.com/products/rammon.htm

위 링크 클릭하면 위 스크린샷 페이지 나온다.

인스톨 프로그램이라 다운로드 한 후 인스톨 해야 된다.

DDR2인가 DDR3인가 DDR4인가 메모리 종류와

메모리 제조 날짜등을 확인할 수 있다.

아랜 내 노트북에 박힌 메모리 2개 정보다.

종류 DDR3

제조업소: 하나는 Nanya 하나는 라막셀인데 라막셀은 메모리 스티카에 라막셀이 적힌게 아니라 Elpida 스티카가 붙여져 있다.

엘피다껀 노트북 샀을때 박혀 있던 거고 Nanya는 중고로 산긴데 클럭 다르고 제조사 다른데 둘이 혼용해서 써도 이상 없드라.

Nanya 램은 2011년 26주째 제조됐다 나오니껜 2011년 6월달 생산된기고 Elpida껀 2012년 7월달 생산된 걸로 보인다.

RAMMon v1.1 Build: 1000 built with SysInfo v1.0 Build: 1132
PassMark (R) Software
www.passmark.com

Memmory summary for Notebook
Number of Memory Devices: 2 Total Physical Memory: 7602 MB (8192 MB)
Total Available Physical Memory: 5417 MB
Memory Load: 28%

Item | Slot #1 | Slot #2 |
——————————————————————————-|————————|————————|-
Ram Type | DDR3 | DDR3 |
Maximum Clock Speed (MHz) | 667 (JEDEC) | 800 (JEDEC) |
Maximum Transfer Speed (MHz) | DDR3-1333 | DDR3-1600 |
Maximum Bandwidth (MB/s) | PC3-10600 | PC3-12800 |
Memory Capacity (MB) | 4096 | 4096 |
Jedec Manufacture Name | Nanya Technology | Ramaxel Technology |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.1 |
Registered | No | No |
ECC | No | No |
DIMM Slot # | 1 | 2 |
Manufactured | Week 26 of Year 2011 | Week 30 of Year 2012 |
Module Part # | NT4GC64B8HB0NS-CG | RMT3160ED58E9W1600 |
Module Revision | 0x0 | 0x4100 |
Module Serial # | 0xC5FC2C0D | 0x7DAD116 |
Module Manufacturing Location | 19 | 1 |
# of Row Addressing Bits | 15 | 15 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 8 | 8 |
# of Ranks | 2 | 2 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 64 | 64 |
Module Voltage | 1.5V | 1.5V |
CAS Latencies Supported | 5 6 7 8 9 | 5 6 7 8 9 10 11 |
Timings @ Max Frequency (JEDEC) | 9-9-9-24 | 11-11-11-28 |
Maximum frequency (MHz) | 667 | 800 |
Maximum Transfer Speed (MHz) | DDR3-1333 | DDR3-1600 |
Maximum Bandwidth (MB/s) | PC3-10600 | PC3-12800 |
Minimum Clock Cycle Time, tCK (ns) | 1.500 | 1.250 |
Minimum CAS Latency Time, tAA (ns) | 13.125 | 13.125 |
Minimum RAS to CAS Delay, tRCD (ns) | 13.125 | 13.125 |
Minimum Row Precharge Time, tRP (ns) | 13.125 | 13.125 |
Minimum Active to Precharge Time, tRAS (ns) | 36.000 | 35.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 6.000 | 6.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 49.125 | 48.125 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 160.000 | 160.000 |
| | |
DDR3 Specific SPD Attributes | | |
Write Recovery Time, tWR (ns) | 15.000 | 15.000 |
Internal Write to Read Command Delay, tWTR (ns) | 7.500 | 7.500 |
Internal Read to Precharge Command Delay, tRTP (ns) | 7.500 | 7.500 |
Minimum Four Activate Window Delay, tFAW (ns) | 30.000 | 30.000 |
Maximum Activate Window in units of tREFI | 0 | 0 |
RZQ / 6 Supported | Yes | Yes |
RZQ / 7 Supported | Yes | Yes |
DLL-Off Mode Supported | Yes | Yes |
Maximum Operating Temperature Range (C) | 0-95 | 0-95 |
Refresh Rate at Extended Operating Temperature Range | 2X | 2X |
Auto-self Refresh Supported | Yes | No |
On-die Thermal Sensor Readout Supported | No | No |
Partial Array Self Refresh Supported | No | Yes |
Thermal Sensor Present | No | No |
Non-standard SDRAM Type | Standard Monolithic | Standard Monolithic |
Maxium Activate Count (MAC) | | |
Module Type | SO-DIMM | SO-DIMM |
Module Height (mm) | 30 | 30 |
Module Thickness (front), (mm) | 2 | 2 |
Module Thickness (back), (mm) | 2 | 2 |
Module Width (mm) | 67.6 | 67.6 |
Reference Raw Card Used | Raw Card F Rev. 2 | Raw Card F Rev. 0 |
DRAM Manufacture | Nanya Technology | Elpida |

 

 

아랜 i3 6100 데스크탑에 박혀 있는 램 2개

둘다 DDR4 같은 걸로

둘다 2016년 4월 생산

스티카에 시리알 남바가 똑같이 적혀 있드만 램정보에도 똑같은 시리알 남바가 젹혀 있다.

RAMMon v1.1 Build: 1000 built with SysInfo v1.0 Build: 1132
PassMark (R) Software
www.passmark.com

Memmory summary for Desktop
Number of Memory Devices: 2 Total Physical Memory: 15826 MB (16384 MB)
Total Available Physical Memory: 11352 MB
Memory Load: 28%

Item | Slot #1 | Slot #2 |
————————————————————————————–|—————————————-|—————————————-|-
Ram Type | DDR4 | DDR4 |
Maximum Clock Speed (MHz) | 1067 (JEDEC) | 1067 (JEDEC) |
Maximum Transfer Speed (MHz) | DDR4-2133 | DDR4-2133 |
Maximum Bandwidth (MB/s) | PC4-17000 | PC4-17000 |
Memory Capacity (MB) | 8192 | 8192 |
Jedec Manufacture Name | Essencore Limited | Essencore Limited |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.0 |
Registered | No | No |
ECC | No | No |
DIMM Slot # | 1 | 2 |
Manufactured | Week 14 of Year 2016 | Week 14 of Year 2016 |
Module Part # | IM48GU48N21-FFFHM | IM48GU48N21-FFFHM |
Module Revision | 0x1 | 0x1 |
Module Serial # | 0x14100000 | 0x14100000 |
Module Manufacturing Location | 0 | 0 |
# of Row Addressing Bits | 15 | 15 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 16 | 16 |
# of Ranks | 2 | 2 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 64 | 64 |
Module Voltage | 1.2V | 1.2V |
CAS Latencies Supported | 9 11 12 13 14 15 16 18 19 | 9 11 12 13 14 15 16 18 19 |
Timings @ Max Frequency (JEDEC) | 15-15-15-35 | 15-15-15-35 |
Maximum frequency (MHz) | 1067 | 1067 |
Maximum Transfer Speed (MHz) | DDR4-2133 | DDR4-2133 |
Maximum Bandwidth (MB/s) | PC4-17000 | PC4-17000 |
Minimum Clock Cycle Time, tCK (ns) | 0.938 | 0.938 |
Minimum CAS Latency Time, tAA (ns) | 13.500 | 13.500 |
Minimum RAS to CAS Delay, tRCD (ns) | 13.500 | 13.500 |
Minimum Row Precharge Time, tRP (ns) | 13.500 | 13.500 |
Minimum Active to Precharge Time, tRAS (ns) | 32.000 | 32.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 3.700 | 3.700 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 46.500 | 46.500 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 260.000 | 260.000 |
| | |
DDR4 Specific SPD Attributes | | |
Maximum Clock Cycle Time, tCKmax (ns) | 1.500 | 1.500 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC4 (ns) | 110.000 | 110.000 |
Minimum Activate to Activate Delay Time different bank group, tRRD_Smin (ns) | 3.700 | 3.700 |
Minimum Activate to Activate Delay Time same bank group, tRRD_Lmin (ns) | 5.300 | 5.300 |
Minimum CAS to CAS Delay Time same bank group, tCCD_Lmin (ns) | 5.355 | 5.355 |
Minimum Four Activate Window Delay (ns) | 21.000 | 21.000 |
Maximum Activate Window in units of tREFI | 8192 | 8192 |
Thermal Sensor Present | No | No |
DRAM Stepping | 1 | 1 |
DRAM Manufacture | | |
SDRAM Package Type | Monolithic, 1 die, Single load stack | Monolithic, 1 die, Single load stack |
Maximum Activate Count (MAC) | Unlimited MAC | Unlimited MAC |
Post Package Repair Supported | No | No |
Module Type | UDIMM | UDIMM |
Module Height (mm) | 32 | 32 |
Module Thickness (front), (mm) | 2 | 2 |
Module Thickness (back), (mm) | 1 | 1 |
Reference Raw Card Used | Raw Card B Rev. 17 | Raw Card B Rev. 17 |
| | |
XMP Attributes | | |
XMP Revision | 2.0 | 2.0 |
Enthusiast / Certified Profile | | |
Module voltage | 1.20V | 1.20V |
Clock speed (MHz) | 1066 | 1066 |
Transfer Speed (MHz) | DDR4-2132 | DDR4-2132 |
Bandwidth (MB/s) | PC4-17000 | PC4-17000 |
Minimum clock cycle time, tCK (ns) | 0.938 | 0.938 |
Supported CAS latencies | 9 11 12 13 14 15 16 17 18 | 9 11 12 13 14 15 16 17 18 |
Minimum CAS latency time, tAA (ns) | 13.500 | 13.500 |
Minimum RAS to CAS delay time, tRCD (ns) | 13.500 | 13.500 |
Minimum row precharge time, tRP (ns) | 13.500 | 13.500 |
Minimum active to precharge time, tRAS (ns) | 32.250 | 32.250 |
Supported timing at highest clock speed | 15-15-15-35 | 15-15-15-35 |
Minimum Active to Auto-Refresh Delay, tRC (ns) | 46.500 | 46.500 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC1 (ns) | 260.000 | 260.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC4 (ns) | 110.000 | 110.000 |
Minimum Four Activate Window Delay, tFAW (ns) | 21.000 | 21.000 |
Minimum Activate to Activate Delay Time different bank group, tRRD_S (ns) | 3.700 | 3.700 |
Minimum Activate to Activate Delay Time same bank group, tRRD_L (ns) | 5.300 | 5.300 |